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NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
* * * * * SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz LOW CURRENT OPERATION
0.65 2.0 0.2 1.3 2 1
UPA812T
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06 (Top View)
2.1 0.1 1.25 0.1
6 0.2 (All Leads) 5
DESCRIPTION
NEC's UPA812T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.
3
4
0.9 0.1 0.7
+0.10
ABSOLUTE MAXIMUM
SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS
RATINGS1 (TA = 25C)
UNITS V V V mA mW mW C C RATINGS 20 10 1.5 65 110 200 150 -65 to +150 PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1
0 ~ 0.1
0.15 - 0.05
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature
TJ TSTG
Note: Pin 3 is identified with a circle on the bottom of the package.
Note: 1.Operation in excess of any one of these parameters may result in permanent damage.
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre2 |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 GHz pF dB dB 0.85 10 12 1.4 1.7 UNITS A A 70 4.5 100 7.0 0.9 MIN UPA812T S06 TYP MAX 0.8 0.8 240
Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA812T-T1, 3K per reel.
California Eastern Laboratories
UPA812T TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
25
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
Total Power Dissipation, PT (mW)
Free Air
Collector Current, IC (mA)
200
2
El
em
20 160 A 15 140 A 120 A 100 A 10 80 A 60 A 5 40 A lB=20 A
en
ts
Pe
in
rE
lem
To t
al
en
t
100
0
50
100
150
0
0.5
1.0
Ambient Temperature, TA (C)
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
50 VCE = 3 V 40 200
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 3 V
Collector Current, IC (mA)
30
DC Current Gain, hFE
100
50
20
10
20
10 0 0.5 1.0 0.5 1 5 10 50
Base to Emitter Voltage, VBE (V)
Collector Current, IC (mA)
FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
5.0
10
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
Gain Bandwidth Product, fT (GHz)
f = 1 MHz
Feddback Capacitance, CRE (pF)
VCE = 3 V f = 1 GHz 8
2.0
1.0
6
0.5
4
0.2
2
0.1 1 2 5 10 20 50
0 0.5
1
5
10
50
Collector to Base Voltage, VCB (V)
Collector Current, IC (mA)
UPA812T TYPICAL PERFORMANCE CURVES (TA = 25C)
INSERTION POWER GAIN vs. COLLECTOR CURRENT
15 25 VCE = 3 V f = 1 GHz
INSERTION POWER GAIN vs. FREQUENCY
VCE = 3 V lc = 7 mA 20
Insertion Power Gain, IS21eI2 (dB)
10
Insertion Power Gain, IS21eI2 (dB)
15
10
5
5
0 0.5
1
5
10
50
0 0.1
0.2
0.5
1.0
2.0
5.0
Collector Current, lC (mA)
Frequency, f (GHz)
NOISE FIGURE vs. COLLECTOR CURRENT
5 VCE = 3 V f = 1 GHz 4
Noise Figure, NF (dB)
3
2
1
0 0.5 1.0 5.0 10 50
Collector Current, lC (mA)
ORDERING INFORMATION
PART NUMBER UPA812T-T1-A QUANTITY 3000 PACKAGING Tape & Reel
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -1/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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